| PART |
Description |
Maker |
| MC100EP446FAG MC100EP446FAR2G MC100EP446MNG MC100E |
3.3 V/5 V 8-Bit CMOS/ECL/TTL Data Input Parallel/Serial Converter
|
ONSEMI[ON Semiconductor]
|
| MC100EP01 MC10EP445 MC10H172FNR2 MC100EL29 MC100H6 |
3.3V / 5V ECL 4-Input OR/NOR
3.3V / 5VECL 8-Bit Serial/Parallel Converter
Dual Binary 1-4-Decoder (High)
5V ECL Dual Differential Data and Clock D Flip-Flop With Set and Reset
9-Bit TTL-ECL Translator
Quad TTL-ECL Translator
Dual 2-Wide 2-3-Input OR-AND/OR-AND-Invert Gate
3.3V / 5V ECL 8-Bit Synchronous Binary Up Counter
3.3 V 1:9 Differential HSTL/PECL to HSTL Clock Driver with LVTTL Clock Select and Enable
3.3V 10-bit LVTTL/LVCMOS to LVPECL Translator
3.3V / 5V ECL Quad D Flip Flop with Set, Reset, and Differential Clock
5V ECL Voltage Controlled Oscillator
3.3V ECL D-Type Flip-Flop with Set and Reset
Binary to 1-8 Decoder (Low)
Differential -5V ECL To TTL Translator
-3.3V / -5V Triple ECL Input to PECL Output Translator
5V ECL Dual Differential 2:1 Multiplexer
Quad MSTR
5V ECL Quad 4-Input OR/NOR Gate
3.3V ECL Dual Differential Data and Clock D-Type Flip-Flop with Set and Reset
Dual 4-5-Input OR/NOR
|
ON Semiconductor
|
| K4E660812E-JC/L K4E640812E-JC/L K4E660812E-TC/L K4 |
8M X 8 EDO DRAM, 45 ns, PDSO32
8M x 8bit CMOS Dynamic RAM with Extended Data Out 8米8位的CMOS动态随机存储器的扩展数据输
(K4E640812E / K4E660812E) 8M x 8bit CMOS Dynamic RAM with Extended Data Out
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| KM48V8104C KM48V8004C KM48V8104CK-45 KM48V8104CKL- |
8M x 8bit CMOS dynamic RAM with extended data out, 50ns
8M x 8bit CMOS dynamic RAM with extended data out, 45ns
8M x 8bit CMOS dynamic RAM with extended data out, 60ns
|
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| KM48C8104B KM48C8004B KM48C8004BK-6 KM48C8004BS-6 |
8M x 8bit CMOS dynamic RAM with extended data out, 5V, 50ns
8M x 8bit CMOS dynamic RAM with extended data out, 5V, 60ns
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| K4E660812E-TC_L K4E640812E K4E640812E-JC_L K4E6408 |
8M x 8bit CMOS Dynamic RAM with Extended Data Out
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| MC100H605FN MC100H605FNG MC100H605 MC100H605FNR2 |
Registered Hex ECL/TTL Translator; Package: 28 LEAD PLCC; No of Pins: 28; Container: Tape and Reel; Qty per Container: 500 HEX ECL TO TTL TRANSLATOR, TRUE OUTPUT, PQCC28
BBG ECL TRNSLATR HEX; Package: 28 LEAD PLCC; No of Pins: 28; Container: Rail; Qty per Container: 37 HEX ECL TO TTL TRANSLATOR, TRUE OUTPUT, PQCC28
Registered Hex ECL to TTL Translator
|
ON Semiconductor
|
| 10129N 10129F 10129 |
Quad TTL to ECL Transistor
Quad TTL-to-ECL Translator
|
PHILIPS[Philips Semiconductors]
|
| K6F4008S2DFAMILY |
512K x 8bit Super Low Power and Low Voltage Full CMOS Static RAM Data Sheet
|
Samsung Electronic
|
| K6F4008U2DFAMILY |
512K x 8bit Super Low Power and Low Voltage Full CMOS Static RAM Data Sheet
|
Samsung Electronic
|
| MC14504B05 MC14504BCPG MC14504BDG MC14504BDTR2 MC1 |
Hex Level Shifter for TTL to CMOS or CMOS to CMOS HEX TTL/CMOS TO CMOS TRANSLATOR, TRUE OUTPUT, PDSO16
|
ONSEMI[ON Semiconductor]
|
